3D interconnect simulation applied to CMP thickness variations

Author

Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu ; Shi-Hao Huang ; Lin, Kevin ; Shan-Chung Lee ; Donghua Liu ; Rong Lv ; Chingyun Hsiang ; Chenmin Hu

Author_Institution

Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan

fYear

2014

Firstpage

1

Lastpage

3

Abstract

Thickness variations of ILD CMP induced yield loss at wafer edge is simulated by 3D Sentaurus Interconnect, in order to achieve more authentic condition, we adopt the image contour extraction technique to stream the genuine contact contour gds together with STI, POLY, ML database. The results demonstrates that when the thickness is over 7k at wafer edge, there is no electric current found, and it has etching stop phenomenon. After optimizing the CMP recipe according the simulation results, the yield of wafer edge get great improvement.

Keywords

chemical mechanical polishing; image processing; production engineering computing; semiconductor technology; 3D Sentaurus interconnect simulation; CMP thickness variations; ILD CMP; ML database; POLY database; STI database; etching; image contour extraction technique; image stream; wafer edge; Databases; Etching; Image edge detection; Semiconductor device modeling; Solid modeling; Streaming media; Three-dimensional displays; CMP; Image Contour Extraction; Sentaurus Interconnect; Simulation; Thickness Variation;

fLanguage

English

Publisher

ieee

Conference_Titel

e-Manufacturing and Design Collaboration Symposium (eMDC), 2014

Type

conf

Filename

7081700