DocumentCode
358603
Title
Nonvolatile, high density, high performance phase-change memory
Author
Tyson, Scott ; Wicker, Guy ; Lowrey, Tyler ; Hudgens, Stephen ; Hunt, Ken
Author_Institution
Mission Res. Corp., Albuquerque, NM, USA
Volume
5
fYear
2000
fDate
2000
Firstpage
385
Abstract
An electrically reprogrammable resistor approach has been developed as a basis for a new nonvolatile memory that is potentially denser, faster, and easier to make than Dynamic RAM (DRAM). It relies on structural phase transitions induced by nanosecond-scale heating and cooling of small volumes of chalcogenide films within the memory cell. Initial target markets include FLASH memory, embedded memory, and DRAM
Keywords
DRAM chips; chalcogenide glasses; flash memories; solid-state phase transformations; DRAM; FLASH memory; MOSFET; chalcogenide films; dynamic RAM; electrically reprogrammable resistor; embedded memory; high performance phase-change memory; nanosecond-scale cooling; nanosecond-scale heating; nonvolatile memory; structural phase transitions; Amorphous materials; Conducting materials; Cooling; Crystalline materials; Crystallization; Nonvolatile memory; Phase change memory; Random access memory; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference Proceedings, 2000 IEEE
Conference_Location
Big Sky, MT
ISSN
1095-323X
Print_ISBN
0-7803-5846-5
Type
conf
DOI
10.1109/AERO.2000.878512
Filename
878512
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