Multi-trench-based technique to improve amorphous SiGe thin-film solar cell performance

Author

Kacha, K. ; Djeffal, F. ; Ferhati, H. ; Benkouider, A. ; Berbezier, I.

Author_Institution

Dept. of Electron., Univ. of Batna, Batna, Algeria

fYear

2014

Firstpage

765

Lastpage

769

Abstract

In order to improve the electrical performance of the conventional amorphous SiGe thin-film solar cells, a new multi-trench technique has been proposed. In this method, the multi-trench is created in the intrinsic SiGe layer and filled with p-type doped Si. The p-type trenches in the intrinsic SiGe layer improve the electrical performance of the proposed design. Electrical characteristics of the proposed structure are analyzed and optimized by 2-D numerical modeling and compared with conventional amorphous SiGe thin-film solar cell characteristics. The extracted results show that the multi-trench-based technique has excellent effect on the fill factor and efficiency of the device.

Keywords

Ge-Si alloys; amorphous semiconductors; semiconductor doping; solar cells; 2D numerical modeling; SiGe; amorphous SiGe thin-film solar cell; electrical performance; intrinsic SiGe layer; multitrench based technique; p-type doped silicon; Doping; Numerical models; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Silicon germanium; SiGe; amorphous; electrical efficiency; fill factor; multi-trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Sciences and Techniques of Automatic Control and Computer Engineering (STA), 2014 15th International Conference on

Type

conf

DOI

10.1109/STA.2014.7086676

Filename

7086676