Metalorganic vapor phase epitaxy for specialty semiconductor devices

Author

Woelk, E. ; Bremser, M. ; Heuken, M. ; Juergensen, H.

Author_Institution

AIXTRON Inc., Buffalo Grove, IL, USA

Volume

5

fYear

2000

fDate

2000

Firstpage

439

Abstract

In this contribution we will present the technique of MOVPE and how it is used today to grow specialty materials and structures that are being investigated for application in future space missions. The material growth is highly developed and the work on devices is going on. We present the device concepts that can be realized using MOVPE. Among these are solar blind AlN UV detectors, high temperature FETs and bipolar transistors from GaN and SiC, low temperature FETs and bipolar transistors from GaAs, InP, GaInP, long wavelength lasers from Sb-compounds, to name but a few. We present the current trends in the production of the underlying film structures

Keywords

III-V semiconductors; MOCVD; antimony; bipolar transistors; field effect transistors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor technology; space vehicle electronics; ultraviolet detectors; AIXTRON; AlN; GaAs; GaInP; GaN; InP; MOVPE; Sb; Sb-compounds; SiC; bipolar transistors; film structures; high temperature FETs; long wavelength lasers; low temperature FET; material grow; metalorganic vapor phase epitaxy; solar blind AlN UV detectors; space missions; Bipolar transistors; Epitaxial growth; Epitaxial layers; FETs; Gallium arsenide; Gallium nitride; Semiconductor materials; Silicon carbide; Space missions; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference Proceedings, 2000 IEEE

Conference_Location

Big Sky, MT

ISSN

1095-323X

Print_ISBN

0-7803-5846-5

Type

conf

DOI

10.1109/AERO.2000.878519

Filename

878519