DocumentCode :
3586280
Title :
Low power challenge and solution for advanced mobile device design
Author :
Haiqing Nan ; Dong Ke ; Ken Choi
Author_Institution :
Logical & Phys. Synthesis Dept., Intel Mobile Commun. Technol. Ltd., Xi´an, China
fYear :
2014
Firstpage :
19
Lastpage :
21
Abstract :
With CMOS technology scaled down, leakage power becomes one of the most important design concerns for mobile device. In this paper, low power and leakage reduction methods in industry for 28nm CMOS technology are introduced. The methodologies which will be discussed include long poly cell ratio optimization, ultralow Vt (threshold voltage) cell ratio optimization, power switch cell insertion, daisy chain number optimization, voltage scaling as well as power island optimization. The advantages and design overhead of these approaches will be discussed as well.
Keywords :
CMOS integrated circuits; circuit optimisation; leakage currents; low-power electronics; switches; CMOS technology; advanced mobile device design; daisy chain number optimization; leakage power; long poly cell ratio optimization; low power method; power island optimization; power switch cell insertion; ultralow threshold voltage cell ratio optimization; voltage scaling; CMOS integrated circuits; CMOS technology; Industries; Lead; Mobile communication; Nanoscale devices; Performance evaluation; Leakage power; Low power; Mobile Device; Nanoscale CMOS;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
Type :
conf
DOI :
10.1109/ISOCC.2014.7087564
Filename :
7087564
Link To Document :
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