Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.