DocumentCode :
3586320
Title :
Analysis and reduction of voltage noise of multi-layer 3D IC with PEEC-based PDN and frequency-dependent TSV models
Author :
Seungwon Kim ; Ki Jin Han ; Seokhyeong Kang ; Youngmin Kim
Author_Institution :
Sch. of Electr. & Comput. Eng., UNIST, Ulsan, South Korea
fYear :
2014
Firstpage :
124
Lastpage :
125
Abstract :
Three dimensional (3D) integrated circuit (IC) technology has been proposed and used to reduce the delay among layers by shortening interconnection with TSVs. However, large power and ground TSV structures generate voltage noise and cause additional IR-drop in power delivery network (PDN). In this work, we investigate and analyze the voltage noise in multiple layers 3D IC stacking with PEEC-based on-chip PDN and frequency-dependent TSV models. Then we propose multi-paired on-chip PDN structure for reducing voltage noise in a 3D IC. Our proposed PDN architecture can achieve approximately maximum 19% IR-drop reduction. In addition, layer dependency of 3D IC between the conventional and the proposed PDN models is analyzed.
Keywords :
integrated circuit interconnections; integrated circuit modelling; three-dimensional integrated circuits; IR-drop reduction; PEEC; frequency-dependent TSV model; ground TSV structure; interconnection; multipaired on-chip PDN structure; multiple layer 3D IC stacking; power TSV structure; power delivery network; three dimensional integrated circuit technology; voltage noise generation; voltage noise reduction analysis; Through-silicon vias; 3D IC; IR drop; PEEC; S-parameter; TSV; power delivery network (PDN); voltage noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
Type :
conf
DOI :
10.1109/ISOCC.2014.7087604
Filename :
7087604
Link To Document :
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