Analysis of structural variation and threshold voltage modulation in 10-nm double gate-all-around (DGAA) transistor

Author

Myunghwan Ryu ; Youngmin Kim

Author_Institution

Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol. (UNIST), Ulsan, South Korea

fYear

2014

Firstpage

228

Lastpage

229

Abstract

Increasing short channel effects (SCE) interrupt the further technology scaling in the CMOS transistors. Beyond 10 nm technology node, the gate-all-around (GAA) FET is considered as a promising solution for continuing the Moore´s law. In this paper, we report the analysis of the double gate-all-around (DGAA) FET in terms of structural variations and the effect of the threshold voltage modulation by independently controlled inner gate. The impact of inner gate thickness and gate oxide thickness variations on the electrical characteristic of the DGAA FET are investigated. In addition, we propose the inner gate utilization to modulate the threshold voltage of the transistor for providing more design options.

Keywords

field effect transistors; CMOS transistors; DGAA FET; DGAA transistor; Moore law; SCE; double gate-all-around FET; double-gate-all-around transistor; gate oxide thickness variation; inner gate thickness; inner gate utilization; short-channel effects; size 10 nm; structural variation; technology node; technology scaling; threshold voltage modulation; transistor threshold voltage; Logic gates; Tungsten; DGAA; Gate-All-Around (GAA); IGAA; SGAA; low-power; oxide thickness variation;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2014 International

Type

conf

DOI

10.1109/ISOCC.2014.7087619

Filename

7087619