Title :
SEU-tolerant active body-bias inverter
Author :
Youngkyu Jang ; Ik-Joon Chang ; Jinsang Kim ; Seungjoo Lee
Author_Institution :
Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
Abstract :
PD-SOI (Partial Depleted Silicon On Insulator) process is a good candidate technology for space system designs, since it features excellent insulation to the silicon substrate compared to the conventional bulk process. However, the radioactive particles from the low earth orbit can causes the single event upset (SEU) or the charge collection in a circuit node, leading to a logical error. We propose SEU-tolerant CMOS logic inverter using a novel active body-bias scheme.
Keywords :
CMOS logic circuits; invertors; radiation hardening (electronics); silicon-on-insulator; CMOS logic inverter; PD-SOI; SEU-tolerant inverter; Si; active body-bias inverter; charge collection; circuit node; excellent insulation; low earth orbit; partial depleted silicon on insulator; radioactive particles; silicon substrate; single event upset; space system designs; Insulators; Lead; Transistors;
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
DOI :
10.1109/ISOCC.2014.7087623