Title :
An output-capacitorless low dropout regulator without resistors
Author :
Jie Mei ; Hao Zhang ; Yoshihara, Tsutomu
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka, Japan
Abstract :
An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.
Keywords :
MOSFET; low-power electronics; voltage regulators; CMOS technology; all-MOSFET low-power low-dropout regulator; capacitance 0 pF to 10 pF; current 50 mA; embedded voltage reference; error amplify; load transient; output-capacitorless low dropout regulator; size 0.18 mum; temperature -25 degC to 100 degC; Artificial intelligence; CMOS integrated circuits; CMOS technology; Distance measurement; RNA; Regulators; Output-Capacitorless low-dropout regulator; embedded voltage reference; low voltage; temperature coefficient;
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
DOI :
10.1109/ISOCC.2014.7087629
