Title :
Comparative study between CMOS and pHEMT active filter
Author :
Halkhams, Imane ; El Hamdani, W. ; Mazer, S. ; El Bekkali, M.
Author_Institution :
LTTI Lab., Univ. Sidi Mohammed Ben Abdallah, Fez, Morocco
Abstract :
This paper relates a comparative study of an active filter based on active inductor. The active filter was designed in two technologies; AMS_SiMOSFET and UMS_pHEMT. Main characteristics of the filters such as input impedance, power gain and quality factor are discussed and a synthesis is given on high frequency performance of the two technologies based on channel mobility, CutOff frequency and density of states of each. We show that the filters can be very selective and that every technology operates at a special frequency band.
Keywords :
CMOS integrated circuits; HEMT integrated circuits; active filters; inductors; AMS_SiMOSFET technology; CMOS; UMS_pHEMT technology; active inductor; channel mobility; cutoff frequency; pHEMT active filter; Active inductors; Band-pass filters; CMOS integrated circuits; Impedance; PHEMTs; Active filter; Active inductor; CMOS; millimeter band; pHEMT;
Conference_Titel :
Microwave Symposium (MMS), 2014 14th Mediterranean
Print_ISBN :
978-1-4799-7390-3
DOI :
10.1109/MMS.2014.7088961
