Title :
Broadband high efficiency GaN RF power amplifier for multi-band applications
Author :
Taghavi, Hosein ; Akbarpour, Mohammadhassan ; Rezaei, Saeed ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
This paper presents the broadband power amplifier design based on characterized behavior of the active device. Compared with other broadband design techniques, this approach is not limited to waveform manipulating; hence, multi octave performance is achievable. GaN HEMT package and die device models are used to verify this approach showing high efficiency performance over very large bandwidth. Simulation results show PAE of higher than 60% over 0.5-4 GHz for die and higher than 50% over 0.3-3.5 GHz for package device models.
Keywords :
III-V semiconductors; gallium compounds; radiofrequency power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; broadband high efficiency RF power amplifier; frequency 0.5 GHz to 4 GHz; multi octave performance; multi-band applications; Broadband amplifiers; Load modeling; Performance evaluation; Power amplifiers; Power generation; Radio frequency; GaN HEMT; Power amplifier; broadband design; high efficiency;
Conference_Titel :
Microwave Symposium (MMS), 2014 14th Mediterranean
Print_ISBN :
978-1-4799-7390-3
DOI :
10.1109/MMS.2014.7088969
