Design of a V-band MMIC LNA for WPAN applications around 60 GHz

Author

Al Majid, Noha ; Mazer, Said ; El Bekkali, Moulhime ; Algani, Catherine

Author_Institution

LTTI Lab., Sidi Mohamed Ben Abdellah Univ., Fez, Morocco

fYear

2014

Firstpage

1

Lastpage

5

Abstract

This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; millimetre wave amplifiers; personal area networks; GaAs; PH15 process; PHEMT; UMS foundry; V-band MMIC LNA; WPAN receiver; cascode configuration; loss -11.26 dB; loss -6.61 dB; low noise amplifier; millimeter-wave band; monolithic microwave integrated circuit; pseudomorphic high electron mobility transistor; size 0.15 mum; wirless personal area network; Gain; Low-noise amplifiers; MMICs; Noise; Noise figure; PHEMTs; LNA; Low Noise Amplifier; MMIC technology; Pseudomorphic High Electron Mobility Transistor (PHEMT); V-band; amplifier; cascode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (MMS), 2014 14th Mediterranean

Print_ISBN

978-1-4799-7390-3

Type

conf

DOI

10.1109/MMS.2014.7088973

Filename

7088973