Title :
Low actuation voltage capacitive RF MEMS switch for Ku-band applications
Abstract :
This paper presents a unique model of shunt capacitive Microelectromechanical switch which works at RF frequency (12-18 GHz) with low insertion loss and high isolation. Low actuation voltage, removal of stiction and making a switch to work at Ku band frequency are main goals of this design. The ribs that are used in this model are made very stiff to avoid stiction problem. Hafnium Dioxide (HfO2) has been used as dielectric material with high dielectric constant (k~25) leading to high isolation. The designed switch is optimized to work at a very low actuation voltage (~11.32 Volt) with high isolation, -20 dB and low insertion loss, -0.095 dB.
Keywords :
dielectric losses; dielectric materials; hafnium compounds; isolation technology; microswitches; microwave switches; radiofrequency integrated circuits; stiction; HfO2; Ku-band frequency applications; dielectric material; frequency 12 GHz to 18 GHz; high dielectric constant; high isolation; loss -0.095 dB; low actuation voltage capacitive RF MEMS switch; low insertion loss; shunt capacitive microelectromechanical switch; stiction removal; Capacitance; Dielectrics; Insertion loss; Micromechanical devices; Radio frequency; Shunts (electrical); Switches; Combined structure; Ku band; Low actuation voltage; Thickness variations;
Conference_Titel :
Convergence of Technology (I2CT), 2014 International Conference for
Print_ISBN :
978-1-4799-3758-5
DOI :
10.1109/I2CT.2014.7092073
