Title :
Analytical modeling of threshold voltage for SiGe MOSFET with two dimensional effects
Author :
Mahajan, Rashmi ; Gautam, D.K.
Author_Institution :
Dept. of Electron. Eng. & Tech., North Maharashtra Univ., Jalgaon, India
Abstract :
Dynamics of threshold voltage for pseudomorphic SiGe structure is presented in this paper. Poisson´s equation has been solved analytically considering short channel effects. Simulation obtained from analytical are in good agreement with the results from Silvaco TCAD. Validation of model for specific range of substrate concentration has been done. Analytical model developed can be extended for the use of high-k material structure as well. This work presenting as a compact solution for high-k SiGe MOSFET structure.
Keywords :
Ge-Si alloys; MOSFET; Poisson equation; high-k dielectric thin films; semiconductor device models; Poisson equation; SiGe; Silvaco TCAD; analytical modeling; high-k material structure; high-k silicon-germanium MOSFET structure; model validation; pseudomorphic silicon-germanium structure; short-channel effects; silicon-germanium MOSFET; substrate concentration; threshold voltage dynamics; two-dimensional effects; Doping; MOSFET; Mathematical model; Semiconductor process modeling; Silicon; Silicon germanium; Threshold voltage; Analytical Modeling; High-k; Pseudomorphic Structures; SiGe MOSFET; TCAD; Threshold Voltage;
Conference_Titel :
Convergence of Technology (I2CT), 2014 International Conference for
Print_ISBN :
978-1-4799-3758-5
DOI :
10.1109/I2CT.2014.7092218
