Title :
Implementation of 32 nm FinFET voltage controlled oscilllator
Author :
Srinivas, P.S.T.N. ; Pulluri, Vijay Kumar ; Kumar, Chandan ; Mal, A.K.
Author_Institution :
Dept. of ECE, Nat. Inst. of Technol., Durgapur, India
Abstract :
As the present trend moving towards the fast working devices, that requires high clock speed with occupying low area and consuming low power. In this paper we discuss the Differences between the frequencies of the Ring oscillators of different stages of 32 nm high-performance of cmos and dual gate 32 nm FinFET. The tuning range of the fifteen stage VCO made up of 32 nm high performance of cmos is compared with VCO made up of dual gate 32 nm FinFET.
Keywords :
CMOS integrated circuits; MOSFET; voltage-controlled oscillators; CMOS; FinFET voltage controlled oscilllator; VCO; clock speed; complementary metal oxide semiconductor; ring oscillator frequency; size 32 nm; tuning range; Delays; FinFETs; Inverters; Logic gates; Ring oscillators; Tuning; Voltage-controlled oscillators; 32 nm HP CMOS; FinFET; Ring Oscillator; VCO;
Conference_Titel :
Convergence of Technology (I2CT), 2014 International Conference for
Print_ISBN :
978-1-4799-3758-5
DOI :
10.1109/I2CT.2014.7092337
