Title :
A CW mid-infrared hybrid silicon laser at room temperature
Author :
Spott, A. ; Davenport, M.L. ; Bovington, J.T. ; Heck, M.J. ; Bowers, J.E. ; Meyer, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
We report the first CW room temperature mid-infrared (λ=2.0μm) laser heterogeneously integrated on silicon. Molecular (polymer-free) wafer bonding of InP to Si is employed. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. Polished Si facets form a Fabry-Pérot laser cavity.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; semiconductor lasers; silicon; wafer bonding; CW mid-infrared hybrid silicon laser; Fabry-Pérot laser cavity; III-V; InP; Si; molecular wafer bonding; polymer-free wafer bonding; room temperature; temperature 293 K to 298 K; wavelength 2 mum; Optical waveguides; Semiconductor lasers; Silicon; Substrates; Threshold current; Waveguide lasers;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
DOI :
10.1109/IPCon.2014.7092974
