DocumentCode
358767
Title
A physics-based MTO model for circuit simulation
Author
Bai, Yuming ; Huang, Alex Q.
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
251
Abstract
This paper presents a comprehensive model of the MTO (MOS turn-off thyristor) based on the lumped-charge modeling technique. The model includes important effects such as avalanche breakdown, Auger recombination and conductivity modulation. The thermal effect is also included in this model. The model is implemented as a MAST template in the Saber simulator and is compared with numerical simulation
Keywords
Auger effect; MOS-controlled thyristors; avalanche breakdown; circuit simulation; digital simulation; electrical conductivity; semiconductor device models; thermal analysis; Auger recombination; MAST template; MOS turn-off thyristor; Saber simulator; avalanche breakdown; circuit simulation; conductivity modulation; lumped-charge modeling technique; numerical simulation; physics-based MTO model; thermal effect; Anodes; Breakdown voltage; Cathodes; Charge carrier processes; Circuit simulation; Electron mobility; MOSFETs; Power system modeling; Silicon; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location
Galway
ISSN
0275-9306
Print_ISBN
0-7803-5692-6
Type
conf
DOI
10.1109/PESC.2000.878850
Filename
878850
Link To Document