Title :
A physics-based MTO model for circuit simulation
Author :
Bai, Yuming ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper presents a comprehensive model of the MTO (MOS turn-off thyristor) based on the lumped-charge modeling technique. The model includes important effects such as avalanche breakdown, Auger recombination and conductivity modulation. The thermal effect is also included in this model. The model is implemented as a MAST template in the Saber simulator and is compared with numerical simulation
Keywords :
Auger effect; MOS-controlled thyristors; avalanche breakdown; circuit simulation; digital simulation; electrical conductivity; semiconductor device models; thermal analysis; Auger recombination; MAST template; MOS turn-off thyristor; Saber simulator; avalanche breakdown; circuit simulation; conductivity modulation; lumped-charge modeling technique; numerical simulation; physics-based MTO model; thermal effect; Anodes; Breakdown voltage; Cathodes; Charge carrier processes; Circuit simulation; Electron mobility; MOSFETs; Power system modeling; Silicon; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.878850
