Title :
pHEMT LNA design and characterization for 4G applications
Author :
Arsalan, Muhammad ; Amir, Faisal ; Khan, Talha
Author_Institution :
Electron. & Power Eng. Dept., Nat. Univ. of Sci. & Technol. (NUST), Karachi, Pakistan
Abstract :
This paper presents a novel implementation of a wideband Low Noise Amplifier (LNA) for wireless communication, 4G Long Term Evolution (LTE) and wireless communication systems. Traditionally, CMOS based designs are fabricated for 4G applications. The proposed LNA design is based on a balanced configuration using ultra low noise Pseudo morphic High Electron Mobility Transistor (pHEMT) which has a fast switching response. The LNA exhibits a wideband frequency response from 1.9 to 2.4 GHz which makes it suitable for variety of wireless and mobile communication applications. The designed LNA has a NF of 0.588 dB with unconditional stability along with available gain of 12.850 dB. The LNA exhibits 20 dBm output power at 1dB gain compression and 28.5 dBm output at 3rd order intercept.
Keywords :
4G mobile communication; CMOS analogue integrated circuits; HEMT integrated circuits; Long Term Evolution; UHF amplifiers; UHF integrated circuits; integrated circuit design; low noise amplifiers; wideband amplifiers; 4G Long Term Evolution; CMOS based designs; LTE; fast switching response; frequency 1.9 GHz to 2.4 GHz; gain 1 dB; gain 12.850 dB; mobile communication; noise figure 0.588 dB; pHEMT LNA design; ultra low noise pseudomorphic high electron mobility transistor; wideband frequency response; wideband low noise amplifier; wireless communication systems; Circuit stability; Gain; Noise measurement; Numerical stability; PHEMTs; Radio frequency; Wideband; CMOS; LTE; Low noise amplifier (LNA); RF; Wilkinson Power Divider (WPD); pHEMT;
Conference_Titel :
Multi-Topic Conference (INMIC), 2014 IEEE 17th International
Print_ISBN :
978-1-4799-5754-5
DOI :
10.1109/INMIC.2014.7096912
