Title :
A novel noise mitigation deisgn for TSV-to-device coupling using power distribution network
Author :
Chang Chang-Pao ; Kang Ming-Kai ; Huang Ting-Yi ; Wu Kai-bin ; Wu Ruey-Beei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The TSV-induced substrate noise has become an important issue in 3D-IC. When signals passes through TSV, noise will couple through silicon substrate and cause serious body voltage fluctuation. This paper proposes using carefully designed power distribution network (PDN) to reduce the coupling coefficient from TSV to surrounding devices. The impact of metal placement and its coverage percentage on noise isolation is evaluated. By utilizing the PDN, the keep-out zone for active devices can be reduced significantly.
Keywords :
distribution networks; elemental semiconductors; integrated circuit design; integrated circuit noise; silicon; three-dimensional integrated circuits; 3D-IC; TSV-induced substrate noise; TSV-to-device coupling; active devices; body voltage fluctuation; metal placement; noise isolation; noise mitigation deisgn; power distribution network; silicon substrate; Couplings; Metals; Noise; Ports (Computers); Substrates; Through-silicon vias; body effect; keep-out zone; power distribution network; substrate coupling noise;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2014 IEEE 23rd Conference on
Print_ISBN :
978-1-4799-3641-0
DOI :
10.1109/EPEPS.2014.7103593
