Artificial neural network modeling for Extrinsic capacitance of FinFET

Artificial neural networks (ANNs) have been applied as an efficient machine-learning tool to model many complex electromagnetic problems recently. This paper gives a comprehensive description on fast extraction of the extrinsic capacitance for 3D FinFET transistors using Q3D with different sizes. This extraction method is later coupled with artificial neural networks to form a controllable model with good balance between accuracy and efficiency. The error analysis of this model is also given at the end of the context..