Title :
Experiment to optimize gate leakage by variation in device parameters in SOI DG nMOS
Author :
Suman, Mukesh Kumar ; Kumar, Sandeep ; Bhowmic, Brinda
Author_Institution :
Electron. & Commun. Eng. Dept., NIT Silchar, Silchar, India
Abstract :
In this paper we try to optimize the Gate leakage current of ultra-thin SOI Double-Gate n-channel MOSFET by varying device parameters such as Si film thickness, Gate length, channel doping, Gate oxide thickness and buried oxide thickness. The ultimate size scaling limits of MOSFET is explored owing to scaling down of critical feature dimension size below 10nm. In this paper, we use a non-equilibrium Green´s function (NEGF) approach. The two-dimensional self-consistent Schrodinger-Poisson solver with open boundaries is used to capture the quantum mechanical nature of carrier transport.
Keywords :
Green´s function methods; MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; NEGF approach; Si; Si film thickness; buried oxide thickness; carrier transport; channel doping; critical feature dimension size; device parameters; gate leakage current; gate length; gate oxide thickness; nonequilibrium Green´s function approach; open boundaries; quantum mechanical nature; two-dimensional self-consistent Schrodinger-Poisson solver; ultimate size scaling limits; ultra-thin SOI double-gate n-channel MOSFET; Doping; Gate leakage; Logic gates; MOSFET; Silicon; Double-Gate; Green´s function; Poisson solver; SOI;
Conference_Titel :
Advances in Engineering and Technology (ICAET), 2014 International Conference on
DOI :
10.1109/ICAET.2014.7105240
