• DocumentCode
    3589504
  • Title

    Strain control using GaxIn1−xAs second cap layer during double-cap procedure in InAs / InP QDs structure

  • Author

    Hirooka, M. ; Kawashima, F. ; Iwane, Y. ; Saegusa, T. ; Shimomura, K.

  • Author_Institution
    Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have successfully demonstrated the strain control of the self assembled Stranski - Krastanov (S-K) InAs quantum dots (QDs) using double-cap procedure. GaxIn1-xAs second cap layer was introduced to compensate the strain of InAs QDs, and obtained the Ga composition of GaxIn1-xAs second cap layer to increase the PL intensity and to minimize the fluctuation of QDs size.
  • Keywords
    III-V semiconductors; deformation; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; Ga composition; GaxIn1-xAs; InAs QD strain; InAs-InP; InAs-InP QD structure; PL intensity; QD size fluctuation; double-cap procedure; second cap layer; self assembled Stranski-Krastanov InAs quantum dots; strain control; Indium phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3589504