DocumentCode
3589526
Title
Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits
Author
Goda, R. ; Amakawa, S. ; Katayama, K. ; Takano, K. ; Yoshida, T. ; Fujishima, M.
Author_Institution
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
fYear
2015
Firstpage
220
Lastpage
223
Abstract
A wideband decoupling power line for millimeter-wave circuits can be realized with a transmission line having an extremely low characteristic impedance, Z0 → 0Ω. It is, however, very difficult to characterize such a line with the ordinary two-port S-parameter measurement. This paper presents an alternative measurement technique that uses transmission line stubs. The measurement results confirm that a power line impedance below 1Ω is successfully achieved over a very wide frequency range (> 80 GHz). A measurement-based method of finding the necessary length of such a low-impedance line for realizing good decoupling is also proposed.
Keywords
CMOS integrated circuits; electric impedance; field effect MIMIC; integrated circuit interconnections; characteristic impedance; low-impedance line; millimeter-wave CMOS circuits; transmission line stubs; two-port S-parameter measurement; wideband decoupling power line; CMOS integrated circuits; CMOS technology; Impedance measurement; Millimeter wave circuits; Power transmission lines; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106098
Filename
7106098
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