Title :
Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric
Author :
Morassi, Luca ; Verzellesi, Giovanni ; Pavan, Paolo ; Veksler, Dmitry ; Ok, Injo ; Zhao, Han ; Lee, Jack C. ; Bersuker, Gennadi
Author_Institution :
DISMI, Univ. of Modena & Reggio Emilia, Modena, Italy
Abstract :
We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device parameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.
Keywords :
III-V semiconductors; MOSFET; alumina; buffer layers; buried layers; doping; gallium arsenide; high electron mobility transistors; indium compounds; Al2O3; InGaAs; buffer layer; buried-channel MOS-HEMT; device design; device optimization; dielectric-barrier interface; doping; gate dielectric; numerical device simulation; Aluminum oxide; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFETs;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
