X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probability

X-ray diffraction characterization was performed on polycrystalline InP films deposited on glass substrates by molecular-beam deposition at substrate temperatures of 200, 250, and 320°C. The peak shift analysis developed for estimating stacking-fault probability in fcc metals is applied to cubic semiconductors for the first time. The net stacking-fault probabilities α_(hkl)^SF = α_(hkl)^ISF - α_(hkl)^ESF (α_(hkl)^ISF and α_(hkl)^ESF being intrinsic and extrinsic stacking-fault probabilities, respectively) together with the fractional changes ε_(hkl)^SF in interplanar spacing at the stacking fault for (111)- and (100)-oriented crystallites are presented as a function of the substrate temperature.