Title :
Ultra-low noise InP pHEMTs for cryogenic Deep-Space and Radio-Astronomy applications
Author :
Alt, A.R. ; Bolognesi, C.R. ; Gallego, J.D. ; Diez, C. ; Lopez-Fernandez, I. ; Barcia, A.
Author_Institution :
Millimeter-Wave Electron. Group, ETHZ, Zürich, Switzerland
Abstract :
InP HEMTs provide the best available low-noise transistor performance. The availability of InP HEMTs for cryogenic front-ends is of paramount importance in ultra-low noise Deep-Space Network (DSN) and Radio-Astronomy (RA) applications. In DSN applications, cryo-cooled InP HEMT front-ends are at the heart of the ESA 34 m antennas used to detect data carrying signals and telemetry information from deep space probes, and excellent HEMT noise performances are key to reducing antenna size and cost, as well as to simplifying spacecraft payloads. In RA, very low noise temperatures are required because of the cold cosmic microwave background (~2.73K).
Keywords :
III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; radioastronomical techniques; semiconductor device noise; InP; cryocooling; cryogenic front-ends; low-noise transistor; radio-astronomy applications; size 34 m; ultralow noise deep-space network; ultralow noise pHEMT; Gold; HEMTs; Indium phosphide; Leakage current; Logic gates; MODFETs; Noise;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
