DocumentCode
3589773
Title
Variation of offset voltage in the irradiated bipolar voltage comparators
Author
Jianbo Liu ; Yuan Liu ; Jinli Cheng ; Yunfei En ; Ting Zhang ; Yujuan He
Author_Institution
Sch. of Mater. & Energy, Guangdong Univ. of Technol., Guangzhou, China
fYear
2014
Firstpage
193
Lastpage
196
Abstract
Total ionizing dose (TID) radiation effects in the bipolar voltage comparator with different biases and dose rates were investigated in this paper. The experimental results show that offset voltages shift after irradiation. Dominated by the current gain degradation of differential PNP transistors, the shifts of offset voltage and output characteristics were significantly affected by biases at high dose rate. Dominated by the current gain degradation of NPN transistors, the shifts of offset voltage and output characteristics were similar in all biases at low dose rate.
Keywords
comparators (circuits); transistors; NPN transistors; TID radiation effects; biases; current gain degradation; differential PNP transistors; dose rates; irradiated bipolar voltage comparators; offset voltage variation; offset voltages; total ionizing dose radiation effects; Bipolar transistors; Computational modeling; Degradation; Interface states; Junctions; Radiation effects; bias; dose rate; offset voltage; total dose effect; voltage comparator;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN
978-1-4799-6631-8
Type
conf
DOI
10.1109/ICRMS.2014.7107168
Filename
7107168
Link To Document