Title :
Investigation of trap states in GaN based HEMTs from temperature dependent I-V characteristics
Author :
Xueyang Liao ; Yuansheng Wang ; Chang Zeng ; Ruguan Li ; Yun Huang
Author_Institution :
5th Electron. Res. Inst., Sci. & Technol. of Reliability Phys. & Applic. of Electron. Components Lab., Minist. of Ind. & Inf. Technol., Guangzhou, China
Abstract :
Temperature-dependent I-V characteristics are performed in this paper to investigate the trap states in AlGaN/GaN HEMTs. From temperature-dependent sub-threshold slope measurements conducted at 300K to 363K and 363K to 423K, two different trap densities are identified at AlGaN/GaN heterostructure interface with DitA and DitB of 1.08~2.6×1012 eV·cm2 and 1.07~1.44×1013 eV·cm-2 respectively. The trap densities are strongly dependent on drain bias voltage. Measurements performed in higher drain bias voltages exhibited larger trap density due to more hot electrons generated at the conditions. Two trap levels of 0.43eV and 0.55eV are also found responsible for Frenkel-Poole emission tunneling.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; Frenkel-Poole emission tunneling; HEMTs; drain bias voltage; electron volt energy 0.43 eV; electron volt energy 0.55 eV; heterostructure interface; hot electrons; temperature 300 K to 423 K; temperature dependent I-V characteristics; temperature-dependent sub-threshold slope measurements; trap density; trap states; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Temperature dependence; Temperature measurement; AlGaN/GaN; Frenkel-Poole emission; sub-threshold slope; temperature; trap density;
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN :
978-1-4799-6631-8
DOI :
10.1109/ICRMS.2014.7107184
