Investigation of trap states in GaN based HEMTs from temperature dependent I-V characteristics

Author

Xueyang Liao ; Yuansheng Wang ; Chang Zeng ; Ruguan Li ; Yun Huang

Author_Institution

5th Electron. Res. Inst., Sci. & Technol. of Reliability Phys. & Applic. of Electron. Components Lab., Minist. of Ind. & Inf. Technol., Guangzhou, China

fYear

2014

Firstpage

267

Lastpage

269

Abstract

Temperature-dependent I-V characteristics are performed in this paper to investigate the trap states in AlGaN/GaN HEMTs. From temperature-dependent sub-threshold slope measurements conducted at 300K to 363K and 363K to 423K, two different trap densities are identified at AlGaN/GaN heterostructure interface with Dit_A and Dit_B of 1.08~2.6×10¹² eV·cm² and 1.07~1.44×10¹³ eV·cm^-2 respectively. The trap densities are strongly dependent on drain bias voltage. Measurements performed in higher drain bias voltages exhibited larger trap density due to more hot electrons generated at the conditions. Two trap levels of 0.43eV and 0.55eV are also found responsible for Frenkel-Poole emission tunneling.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; Frenkel-Poole emission tunneling; HEMTs; drain bias voltage; electron volt energy 0.43 eV; electron volt energy 0.55 eV; heterostructure interface; hot electrons; temperature 300 K to 423 K; temperature dependent I-V characteristics; temperature-dependent sub-threshold slope measurements; trap density; trap states; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Temperature dependence; Temperature measurement; AlGaN/GaN; Frenkel-Poole emission; sub-threshold slope; temperature; trap density;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on

Print_ISBN

978-1-4799-6631-8

Type

conf

DOI

10.1109/ICRMS.2014.7107184

Filename

7107184