Title :
Bias dependence of total dose effects in the irradiated EEPROM devices
Author :
Yujuan He ; Yuan Liu
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
Abstract :
Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper. Three biases, concluded with NONE bias, Zero bias and Work bias, were used in EEPROM devices with “1” state and "0" state in this paper. It was indicated that the threshold voltage shift negatively as total dose increased in EEPROM devices with "1" state and the threshold voltage shift positively as total dose increased in EEPROM devices with "0" state, and the Work bias was the worst irradiation bias regardless of "1" state or "0" state.
Keywords :
EPROM; radiation effects; bias dependence; ionizing dose irradiation effect; irradiated EEPROM devices; none bias condition; total dose effect; work bias condition; zero bias condition; Charge carrier processes; EPROM; Logic gates; Nonvolatile memory; Radiation effects; Reliability; Threshold voltage; EEPROM; Total dose effect; bias;
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN :
978-1-4799-6631-8
DOI :
10.1109/ICRMS.2014.7107318
