Effective methods for evaluation of high power laser diode quality and reliability

Author

Guoguang Lu ; Shaofeng Xie ; Yun Huang ; Junsheng Cao

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China

fYear

2014

Firstpage

874

Lastpage

877

Abstract

In this paper, a high power laser diode electrical derivative parameters test instrument is developed, the wavelength range of this instrument is between 400nm to 1300nm, the power range of this instrument is between 1W to 15W. The relationships between the device reliability and the electrical derivative parameters are discussed. Then the measurements of 20 high power 808nm AlGaAs/GaAs laser diodes by using this instrument combined with the aging test results demonstrate that the electrical derivative parameters can use to evaluate the laser diode reliability and quality effectively.

Keywords

III-V semiconductors; ageing; aluminium compounds; gallium arsenide; laser reliability; laser variables measurement; semiconductor device testing; semiconductor lasers; AlGaAs-GaAs; aging test; high power laser diode quality; high power laser diode reliability; power 1 W to 15 W; wavelength 400 nm to 1300 nm; Aging; Diode lasers; Instruments; Junctions; Reliability; Resistance; Semiconductor lasers; aging; electrical derivative; laser diode; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on

Print_ISBN

978-1-4799-6631-8

Type

conf

DOI

10.1109/ICRMS.2014.7107327

Filename

7107327