Title :
Nonlinear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator
Author :
Laurent, S. ; Callet, G. ; Nallatamby, J.C. ; Prigent, M. ; Nodjiadjim, V. ; Riet, M.
Author_Institution :
Xlim, Univ. de Limoges, Brive, France
Abstract :
This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was made by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-m-long two-finger emitter. This paper describes the complete nonlinear modeling of heterojunction bipolar transistor used in this circuit. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared.
Keywords :
MMIC oscillators; amplifiers; gallium compounds; heterojunction bipolar transistors; indium compounds; Alcatel-Thales III-V Lab; DHBT process; DHBT submicronic technology; InP-GaAsSb-InP; Q-band MMIC oscillator; amplifier mode; emitter; frequency 45 GHz; heterojunction bipolar transistor; nonlinear model; nonlinear operating condition; oscillator simulation; Heterojunction bipolar transistors; Integrated circuit modeling; Phase noise; Temperature measurement;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Print_ISBN :
978-1-4244-7231-4
