Title :
InP DHBT transimpedance amplifiers with automatic offset compensation for 100 Gbit/s optical communications
Author :
Dupuy, J.-Y. ; Jorge, F. ; Riet, M. ; Konczykowska, A. ; Godin, J.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We present the design, fabrication and measurement of two transimpedance amplifiers with single-ended input and differential output for optical fibre communication systems. The integrated circuits have been fabricated in a 0.7-μm InP DHBT technology. The small-signal differential transimpedance gain and 3-dB bandwidth are respectively 1100 Ω and 50 GHz for the first circuit and 500 Ω and > 65 GHz for the second circuit. Eye diagrams were measured at 86 Gbit/s showing clear eye opening. An automatic offset compensation loop was implemented and validated.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; operational amplifiers; optical fibre communication; DHBT transimpedance amplifier; InP; automatic offset compensation loop; bit rate 100 Gbit/s; double heterojunction bipolar transistor; eye diagram; optical fibre communication system; size 0.7 mum; small-signal differential transimpedance gain; Bandwidth; DH-HEMTs; Differential amplifiers; Gain; Indium phosphide; Scattering parameters;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Print_ISBN :
978-1-4244-7231-4
