4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications

This paper presents extensive study of proposed 4H-Silicon Carbide (SiC) based Dopant Segregated (DS) Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with high-k gate dielectric for hostile environment such as high temperature and radiation exposure for high power microwave applications. The Analog/RF performance of SiC-CGAA has been investigated by exploiting temperature variation from 300 K to 500 K, along with the leverage of Schottky-Barrier (SB) Source/Drain and Dopant Segregation (DS). DS is primarily used to reduce the ambipolar behavior of SB MOSFET and boost the performance of the device. Analog/RF performance in terms of main figure of merits like I_on/I_off, transconductance (g_m), Early Voltage, Stern Stability Factor (K), cut-off frequency (f_t) has been carried out using ATLAS-3D device simulator.