Silicon carbide based DSG MOSFET for high power, high speed and high frequency applications

Author

Rewari, Sonam ; Gupta, R.S. ; Deswal, S.S. ; Nath, Vandana

Author_Institution

Dept. of Electron. & Commun. Eng, Maharaja Agrasen Inst. Eng., Delhi, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

In this paper, High Power Double Surrounding Gate(DSG) MOSFET with 4H-SiC as material has been studied. Also, the RF performance of DSG MOSFET has been investigated for various channel length and the results so obtained are compared with the conventional Surrounding Gate(SG) MOSFET, using ATLAS 3D device simulator. From the analysis, it is shown that cylindrical Double Surrounding Gate(DSG) MOSFET exhibits superior power and analog performance than conventional cylindrical Surrounding Gate(SG) MOSFET. DSG MOSFET has a number of desirable features, such as higher transducer power gain, better current gain, high on-state current, improved transconductance g_m, high unity-gain frequency f_T. The improvement is due to formation of two conducting paths because of the presence of two gates. Power has further been improved because Silicon Carbide has been used as material instead of Silicon.

Keywords

MOSFET; high-speed integrated circuits; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC DSG MOSFET; ATLAS 3D device simulator; SiC; high frequency applications; high power applications; high power double surrounding gate MOSFET; high speed applications; silicon carbide based DSG MOSFET; Logic gates; MOSFET; Performance evaluation; Radio frequency; Silicon; Silicon carbide; Transducers; Double Surrounding Gate(DSG) MOSFET; High Power; Surrounding Gate(SG); simulations;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics (IICPE), 2014 IEEE 6th India International Conference on

Print_ISBN

978-1-4799-6045-3

Type

conf

DOI

10.1109/IICPE.2014.7115857

Filename

7115857