• DocumentCode
    3590956
  • Title

    Variation of IGBT switching energy loss with device current: An experimental investigation

  • Author

    Das, Subhas Chandra ; Narayanan, G. ; Tiwari, Arvind

  • Author_Institution
    GE Transp. Syst., GE India Tech Centre Pvt Ltd., Bangalore, India
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with device current at different DC link voltages and junction temperatures. The IGBT switching characteristics are obtained experimentally at various operating conditions, and turn-on and turn-off switching energy losses are determined. The relationship between the switching energy losses and the device currents are presented in mathematical form, which are derived from experimental data. Finally, a comparison has been made between calculated switching energy loss from linearized loss model and the derived expression from actual measured loss.
  • Keywords
    PWM power convertors; insulated gate bipolar transistors; switching convertors; DC link voltages; IGBT switching energy loss variation; PWM converter; device current; insulated gate bipolar transistor; junction temperatures; linearized loss model; turn-off switching energy losses; turn-on switching energy losses; Current measurement; Energy loss; Insulated gate bipolar transistors; Loss measurement; Switches; Temperature measurement; Voltage measurement; IGBT; PWM converter; linear loss model; switching energy loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics (IICPE), 2014 IEEE 6th India International Conference on
  • Print_ISBN
    978-1-4799-6045-3
  • Type

    conf

  • DOI
    10.1109/IICPE.2014.7115863
  • Filename
    7115863