DocumentCode :
3590956
Title :
Variation of IGBT switching energy loss with device current: An experimental investigation
Author :
Das, Subhas Chandra ; Narayanan, G. ; Tiwari, Arvind
Author_Institution :
GE Transp. Syst., GE India Tech Centre Pvt Ltd., Bangalore, India
fYear :
2014
Firstpage :
1
Lastpage :
5
Abstract :
Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with device current at different DC link voltages and junction temperatures. The IGBT switching characteristics are obtained experimentally at various operating conditions, and turn-on and turn-off switching energy losses are determined. The relationship between the switching energy losses and the device currents are presented in mathematical form, which are derived from experimental data. Finally, a comparison has been made between calculated switching energy loss from linearized loss model and the derived expression from actual measured loss.
Keywords :
PWM power convertors; insulated gate bipolar transistors; switching convertors; DC link voltages; IGBT switching energy loss variation; PWM converter; device current; insulated gate bipolar transistor; junction temperatures; linearized loss model; turn-off switching energy losses; turn-on switching energy losses; Current measurement; Energy loss; Insulated gate bipolar transistors; Loss measurement; Switches; Temperature measurement; Voltage measurement; IGBT; PWM converter; linear loss model; switching energy loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics (IICPE), 2014 IEEE 6th India International Conference on
Print_ISBN :
978-1-4799-6045-3
Type :
conf
DOI :
10.1109/IICPE.2014.7115863
Filename :
7115863
Link To Document :
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