Title :
Capacitance variations in Cd3As2 thin film sandwich structures
Author :
Din, M.B.H. ; Gould, R.D.
fDate :
6/22/1905 12:00:00 AM
Abstract :
Cadmium arsenide (Cd3As2) is a high conductivity II-VI semiconductor. Following a previous DC investigation, the capacitance has been measured as a function of film thickness, temperature (163-453 K), and frequency (100 Hz-20 kHz) in Ag-Cd3 As2-Al structures. There was a decrease with frequency and an increase with temperature, as reported in various other materials. After annealing at 473 K the decrease in capacitance with frequency was enhanced due to concomitant changes in the equivalent circuit parameters, whereas unannealed Ag-Cd3As2-(Au or Ag) structures showed reduced capacitance, ascribed to changes in the contact impedance
Keywords :
II-VI semiconductors; annealing; cadmium compounds; capacitance measurement; electric impedance; equivalent circuits; metal-semiconductor-metal structures; semiconductor thin films; temperature; 100 Hz to 20 kHz; 163 to 453 K; 473 K; Ag-Cd3As2-Al; Cd3As2; annealing; capacitance variations; contact impedance; equivalent circuit parameters; film thickness; frequency; high conductivity II-VI semiconductor; temperature; thin film sandwich structures; unannealed structures; Annealing; Cadmium compounds; Capacitance measurement; Conductivity; Equivalent circuits; Frequency measurement; Impedance; Semiconductor films; Temperature; Thickness measurement;
Conference_Titel :
TENCON 2000. Proceedings
Print_ISBN :
0-7803-6355-8
DOI :
10.1109/TENCON.2000.893566
