Title :
The effect of static charge imbalance on the on state behavior of the superjunction power MOSFET: CoolMOS
Author :
Kondekar, Pravin N. ; Oh, Hawn Sool ; Cho, Young-Bum ; Kim, Young-Beom
Author_Institution :
Dept. of Electron., Inf. & Commun. Eng., Kon-Kuk Univ., Seoul, South Korea
Abstract :
The effect of static charge imbalance on the forward blocking voltage (FBV) of a superjunction power MOSFET designed for 600 V is investigated with device simulation. It is observed that the presence of the conduction channel and carriers in the drift region in the on state effectively changes the charge balance in the device. As a result, the BV changes substantially with the applied gate voltage. The variation of FBV as function of gate voltage VGS is obtained by device simulation, for three cases of superjunction (SJ) drift layer doping variations (i) Na = Nd, (ii) Na > Nd, (iii) Nd > Na. Representative potential contours are also shown for illustration.
Keywords :
electric potential; power MOSFET; 600 V; CoolMOS; breakdown voltage; conduction channel; conduction channel and carriers; drift layer doping variations; drift region; forward blocking voltage; gate voltage; metal-oxide-semiconductor field effect transistor; on state behavior; static charge imbalance; superjunction power MOSFET; Current density; Electric breakdown; Electron mobility; Electron traps; MOSFET circuits; Neck; Neodymium; Power MOSFET; Space charge; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on
Print_ISBN :
0-7803-7885-7
DOI :
10.1109/PEDS.2003.1282682
