The effect of static charge imbalance on the on state behavior of the superjunction power MOSFET: CoolMOS

Author

Kondekar, Pravin N. ; Oh, Hawn Sool ; Cho, Young-Bum ; Kim, Young-Beom

Author_Institution

Dept. of Electron., Inf. & Commun. Eng., Kon-Kuk Univ., Seoul, South Korea

Volume

1

fYear

2003

Firstpage

77

Abstract

The effect of static charge imbalance on the forward blocking voltage (FBV) of a superjunction power MOSFET designed for 600 V is investigated with device simulation. It is observed that the presence of the conduction channel and carriers in the drift region in the on state effectively changes the charge balance in the device. As a result, the BV changes substantially with the applied gate voltage. The variation of FBV as function of gate voltage V_GS is obtained by device simulation, for three cases of superjunction (SJ) drift layer doping variations (i) N_a = N_d, (ii) N_a > N_d, (iii) N_d > N_a. Representative potential contours are also shown for illustration.

Keywords

electric potential; power MOSFET; 600 V; CoolMOS; breakdown voltage; conduction channel; conduction channel and carriers; drift layer doping variations; drift region; forward blocking voltage; gate voltage; metal-oxide-semiconductor field effect transistor; on state behavior; static charge imbalance; superjunction power MOSFET; Current density; Electric breakdown; Electron mobility; Electron traps; MOSFET circuits; Neck; Neodymium; Power MOSFET; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on

Print_ISBN

0-7803-7885-7

Type

conf

DOI

10.1109/PEDS.2003.1282682

Filename

1282682