Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green´s Function Formalism

Author

Shaukat, Ayesha ; Islam, Naz E.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Missouri, Columbia, MO, USA

fYear

2014

Firstpage

372

Lastpage

375

Abstract

This paper demonstrates a comparative study of Silicon (Si) and Gallium Arsenide (GaAs) in Double Gate Silicon -- on-Insulator (DGSOI) MOSFET, where electrons, when held in a quantum well, are ballistic ally transported from source to drain. Different parameters like Density of States (DOS), current voltage (IV) characteristics and exchange correlation effects are compared and discussed using Non Equilibrium Green s´ Function (NEGF) formulation.

Keywords

Green´s function methods; III-V semiconductors; MOSFET; ballistic transport; electronic density of states; elemental semiconductors; gallium arsenide; silicon; silicon-on-insulator; GaAs; Si; ballistic transport; current voltage characteristics; density of states; double gate silicon-on-insulator MOSFET; exchange correlation effects; non equilibrium Green function formalism; Information technology; Ballistic Transport; DGSOI MOSFETs; DIBL; Density of States; NEGF; Nanowire MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Frontiers of Information Technology (FIT), 2014 12th International Conference on

Print_ISBN

978-1-4799-7504-4

Type

conf

DOI

10.1109/FIT.2014.76

Filename

7118430

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3591778