Title :
Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green´s Function Formalism
Author :
Shaukat, Ayesha ; Islam, Naz E.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Missouri, Columbia, MO, USA
Abstract :
This paper demonstrates a comparative study of Silicon (Si) and Gallium Arsenide (GaAs) in Double Gate Silicon -- on-Insulator (DGSOI) MOSFET, where electrons, when held in a quantum well, are ballistic ally transported from source to drain. Different parameters like Density of States (DOS), current voltage (IV) characteristics and exchange correlation effects are compared and discussed using Non Equilibrium Green s´ Function (NEGF) formulation.
Keywords :
Green´s function methods; III-V semiconductors; MOSFET; ballistic transport; electronic density of states; elemental semiconductors; gallium arsenide; silicon; silicon-on-insulator; GaAs; Si; ballistic transport; current voltage characteristics; density of states; double gate silicon-on-insulator MOSFET; exchange correlation effects; non equilibrium Green function formalism; Information technology; Ballistic Transport; DGSOI MOSFETs; DIBL; Density of States; NEGF; Nanowire MOSFETs;
Conference_Titel :
Frontiers of Information Technology (FIT), 2014 12th International Conference on
Print_ISBN :
978-1-4799-7504-4
DOI :
10.1109/FIT.2014.76
