DocumentCode :
3591856
Title :
Intrinsically switchable ferroelectric BAW resonators and filters
Author :
Lee, Victor ; Sis, Seyit A. ; Zhu, Xinen ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2010
Firstpage :
803
Lastpage :
806
Abstract :
In this paper, intrinsically switchable radio frequency (RF) resonators and bandpass filters using ferroelectric thin film technology are presented. Ferroelectrics materials exhibit electrostriction and dc electric field induced piezoelectricity. This paper discusses the design and fabrication of intrinsically switchable film bulk acoustic resonators (FBARs), FBAR filters, and contour mode resonators by employing the dc electric field induced piezoelectricity of the ferroelectric BaxSr(1-x)TiO3. Such resonators and filters have the ability to decrease the complexity, power consumption, and cost of frequency agile radios while improving their performance and reliability.
Keywords :
acoustic resonators; band-pass filters; bulk acoustic wave devices; ferroelectric materials; resonator filters; bandpass filters; ferroelectric thin film technology; film bulk acoustic resonators; intrinsically switchable ferroelectric BAW filters; intrinsically switchable ferroelectric BAW resonators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616160
Link To Document :
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