• DocumentCode
    3591856
  • Title

    Intrinsically switchable ferroelectric BAW resonators and filters

  • Author

    Lee, Victor ; Sis, Seyit A. ; Zhu, Xinen ; Mortazawi, Amir

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • Firstpage
    803
  • Lastpage
    806
  • Abstract
    In this paper, intrinsically switchable radio frequency (RF) resonators and bandpass filters using ferroelectric thin film technology are presented. Ferroelectrics materials exhibit electrostriction and dc electric field induced piezoelectricity. This paper discusses the design and fabrication of intrinsically switchable film bulk acoustic resonators (FBARs), FBAR filters, and contour mode resonators by employing the dc electric field induced piezoelectricity of the ferroelectric BaxSr(1-x)TiO3. Such resonators and filters have the ability to decrease the complexity, power consumption, and cost of frequency agile radios while improving their performance and reliability.
  • Keywords
    acoustic resonators; band-pass filters; bulk acoustic wave devices; ferroelectric materials; resonator filters; bandpass filters; ferroelectric thin film technology; film bulk acoustic resonators; intrinsically switchable ferroelectric BAW filters; intrinsically switchable ferroelectric BAW resonators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616160