Cross-line characterization for capacitive cross coupling in differential millimeter-wave CMOS amplifiers

Author

Tokgoz, Korkut Kaan ; Kimsrun Lim ; Yuuki Seo ; Kawai, Seitarou ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2015

Firstpage

46

Lastpage

48

Abstract

An electrically symmetric cross-line and its characterization are proposed for capacitive cross coupling in differential amplifiers. The characterization of the device is done using two structures. L-2L method is applied to achieve virtual-thru connection of Ground-Signal-Signal- Ground (GSSG) pads and fixtures used in cross-line characterization structures. Pad parasitics are modeled with T-model which provides more accurate results than Π-model. Characterization of cross-line is done using one structure and verified with the other. Comparisons show well aggrement in terms of four-port S-parameter responses up to 67 GHz.

Keywords

CMOS analogue integrated circuits; S-parameters; differential amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; Π-model; GSSG pads; L-2L method; T-model; capacitive cross coupling; cross-line characterization; cross-line characterization structures; differential millimeter-wave CMOS amplifiers; four-port S-parameter responses; ground-signal-signal-ground pads; pad parasitics; virtual-thru connection; CMOS integrated circuits; Coplanar waveguides; Couplings; Metals; Scattering parameters; Semiconductor device modeling; Transceivers; CMOS; Capacitive cross coupling; characterization; cross-line; differential; mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on

Type

conf

DOI

10.1109/SIRF.2015.7119870

Filename

7119870