DocumentCode
3592291
Title
Quantum Dot-based Integrated OptoelectronicDevices
Author
Mokkapati, S. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
Volume
1
fYear
2006
Firstpage
108
Lastpage
109
Abstract
Quantum dot-based integrated optoelectronic devices using two different techniques are reported. Selective area epitaxy is used to fabricate a laser integrated with a waveguide while the post-growth technique of impurity free vacancy disordering is used to fabricate multi-color infrared photodetectors.
Keywords
infrared photodetectors; interdiffusion; intermixing; photonic integrated circuits; quantum dots; selective area epitaxy; Atomic layer deposition; Dielectric substrates; Epitaxial growth; Optical losses; Optical waveguides; Photodetectors; Photonic band gap; Quantum dots; Quantum well lasers; Waveguide lasers; infrared photodetectors; interdiffusion; intermixing; photonic integrated circuits; quantum dots; selective area epitaxy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247579
Filename
1717029
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