Novel Dilute III-nitride Materials Growth and Characterization for Device Applications

The conventional group III-nitrides (AlN, GaN and InN) and their alloys represent an important class of direct band gap semiconductors. These materials have exhibited exceptional physical properties and high potentials for their use in numerous commercial applications beyond the capabilities of silicon technology. The direct wide band gaps, intrinsic high carrier mobility and the abilities to form heterostructures have allowed these materials to dominate in the photonic and electronic device market (e.g., light emitters, photodiodes and high-speed/high power electronics). In this paper we have presented an overview of the structural, electrical, phonon and optical properties of III-nitrides with special emphasis on characterizing their lattice dynamical and defect traits. Discussions on the benefits of binary and ternary alloys are focused in the context of using them to prepare quantum wells and super lattice structures in designing devices from ultraviolet photo-conductors, visible light-emitting-diodes and laser diodes. After summarizing the current status of conventional materials, we have evaluate their dynamical and defect properties with implications of exploiting these and other non-conventional III-nitrides for future applications.