Title :
Reliability and non-hermetic properties of Ge/Si optoelectronic devices
Author :
Su Li ; Liangbo Wang ; Tuo Shi ; Pengfei Cai ; Mengyuan Huang ; Wang Chen ; Ching-yin Hong ; Dong Pan
Author_Institution :
SiFotonics Technol. Co., Ltd., Woburn, MA, USA
Abstract :
Our CMOS-foundry mass-produced Ge/Si optoelectronic devices have passed the high temperature accelerated aging test, THB test and HAST test, which demonstrate satisfactory reliability and promising potential for non-hermetic applications.
Keywords :
CMOS integrated circuits; Ge-Si alloys; ageing; integrated optoelectronics; life testing; semiconductor device reliability; CMOS-foundry mass devices; Ge-Si; Ge-Si optoelectronic devices; HAST test; THB test; high temperature accelerated aging test; highly accelerated stress test; nonhermetic properties; reliability properties; temperature-humidity-bias test; Accelerated aging; Dark current; Optoelectronic devices; Reliability; Silicon; Standards; Stress;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
