Title :
Monolithic Broadband Power Amplifier at X-Band
Author :
Platzker, A. ; Durschlag, M.S. ; Vorhaus, J.
Abstract :
Single-ended broadband power amplifier for X-band operation was designed and fabricated on GaAs with chip dimensions of 4.3 x 2.1 x 0.1 mm. The amplifier exhibited over 2 GHz of 1 db small signal bandwidth with more than 1.6 W at 9 db gain at mid-band CW operation with 20% power added efficienty. The recently developed, potentially high yielding, Ta2O5 capacitor technology enabled the small chip size.
Keywords :
Broadband amplifiers; Capacitors; FETs; Gallium arsenide; Gold; Impedance matching; Operational amplifiers; Performance analysis; Power amplifiers; Signal design;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1983.1151043
