Characterization studies of non-stick on pad (NSOP) using AES, XPS and TOF-SIMS

Author

Hua Younan ; Chen Yixin ; Shao Jingjing ; Hao Meng ; Shen Yue ; Xing Zhenxiang ; Feng Yang ; Fu Chao ; Li Xiaomin

Author_Institution

WinTech Nano-Technol. Services Pte. Ltd., Singapore, Singapore

fYear

2014

Firstpage

1

Lastpage

4

Abstract

In the wafer fabrication (fab) and assembly process, process underetch residue and material contamination on bondpads may cause NSOP (non-stick on pad) problem. In this paper, the root cause of 3 NSOP cases were discussed and identified by using Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) techniques. Our failure analysis results showed that the root causes were attributed to either wafer fabrication or assembly process such as Si underetch, Ni₂O₃ contamination and tape (with PDMS) residue.

Keywords

Auger electron spectroscopy; X-ray photoelectron spectra; assembling; contamination; failure analysis; secondary ion mass spectroscopy; semiconductor technology; time of flight mass spectroscopy; AES; Auger electron spectroscopy; NSOP; Ni₂O₃; Si; TOF-SIMS; X-ray photoelectron spectroscopy; XPS; assembly process; bondpads; characterization study; failure analysis; material contamination; nonstick on pad; tape residue; time-of-flight secondary ion mass spectrometry; underetch residue; wafer fabrication; Assembly; Contamination; Corrosion; Failure analysis; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Conference (IEMT), 2014 IEEE 36th International

Type

conf

DOI

10.1109/IEMT.2014.7123076

Filename

7123076