DocumentCode :
3592906
Title :
Six sigma: Systematic approach in probe damage reduction
Author :
Placido, Glenn T. ; Olalia, Carl ; Alolod, Rhal
Author_Institution :
ON Semicond. Philippines, ON Semicond., Carmona, Philippines
fYear :
2014
Firstpage :
1
Lastpage :
6
Abstract :
This paper describes how probe damage, the major defect at sort process, was toppled down nearly to ground level using the systematic approach of Six Sigma. A thorough study on the characteristic of the probe damage was made. Using root cause analysis tools, such as process mapping, cause and effect matrix, significance testing, and other useful quality tools, the sources of probe damage were identified, validated and solutions were developed. The PPM level of probe damage was significantly reduced resulting to less wafer scrappage, high yield and improvement on sort process efficiency.
Keywords :
cause-effect analysis; matrix algebra; semiconductor device reliability; semiconductor technology; six sigma (quality); PPM level; cause and effect matrix; probe damage reduction; process mapping; root cause analysis; significance testing; six sigma; wafer scrappage; Cleaning; Fasteners; Inspection; Loading; Needles; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Conference (IEMT), 2014 IEEE 36th International
Type :
conf
DOI :
10.1109/IEMT.2014.7123114
Filename :
7123114
Link To Document :
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