Pulse-mode selective MOVPE method for high-quality strained InGaAsP MQW structure

Author

Sakata, Y. ; Inomoto, Y. ; Komatsu, K.

Author_Institution

ULSI Div. Dev. Lab., NEC Corp., Shiga, Japan

fYear

1998

Firstpage

317

Lastpage

320

Abstract

Pulse-mode selective MOVPE on a narrow stripe region was investigated for achieving excellent crystal quality of InGaAsP/InGaAsP strained MQW structure. The flatness of selectively grown InGaAsP layers were drastically improved by pulse-mode epitaxy due to the enhanced migration effect. Furthermore, very narrow photoluminescence spectrum linewidth of 28 meV at 25°C for strained MQW structure was realized. The 1.3 μm-wavelength buried heterostructure (BH) laser diode (LD) which has a strained MOW active layer grown by the pulse-mode selective MOVPE showed the record low-operation current at a high temperature of 100°C

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; quantum well lasers; semiconductor growth; semiconductor superlattices; spectral line breadth; vapour phase epitaxial growth; 1.3 mum; 100 C; 25 C; InGaAsP; InGaAsP/InGaAsP strained MQW structure; buried heterostructure laser diode; crystal quality; enhanced migration effect; flatness; high-quality strained InGaAsP MQW structure; low-operation current; narrow photoluminescence spectrum linewidth; narrow stripe region; pulse-mode epitaxy; pulse-mode selective MOVPE; strained MQW structure; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical scattering; Optical waveguides; Quantum well devices; Semiconductor waveguides; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712466

Filename

712466