DocumentCode
3593401
Title
InP based quantum dot/dash material for high speed optoelectronic devices: Recent results and prospects
Author
Reithmaier, J.P. ; Eisenstein, Gadi
Author_Institution
Inst. of Nanostruct. Technol. & Analytics (INA), Univ. of Kassel, Kassel, Germany
fYear
2012
Firstpage
1
Lastpage
3
Abstract
A review is given on the recent progress in 1.55 μm QD laser material based on an improved geometry control of QDs and its application in high speed optoelectronic devices. Also a prospect will be given for the realization of high speed directly modulated QD lasers having the potential to reach data rates of 25 GBit/s.
Keywords
III-V semiconductors; indium compounds; optical modulation; optoelectronic devices; quantum dash lasers; quantum dot lasers; semiconductor quantum dots; InP; QD laser material; bit rate 25 Gbit/s; high speed directly modulated QD laser; high speed optoelectronic device; improved geometry control; quantum dot-dash laser material; size 1.55 mum; Gain; Laser modes; Materials; Measurement by laser beam; Modulation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications (ECOC), 2012 38th European Conference and Exhibition on
Type
conf
Filename
6706314
Link To Document