Combining of Three Power FET´s Operating in 2-CM Wavelength

Author

Galdetckii, A. ; Klimova, A. ; Manchenko, L. ; Pchelin, V.

Author_Institution

Fed. State Unitary Corp. R&PC "Istok", Fryazino

Volume

1

fYear

2006

Firstpage

165

Lastpage

166

Abstract

In this paper the design of three-way travelling-wave divider/combiner is presented. The scheme proposed allows combining power microwave FETs. Combined circuits´ topologies are shown with various substrates. Divider and combiner have been designed on 0.5 mm-thick alumina substrates. Input and output transmission lines have been used as matching capacitors and have been designed on 0.3 mm-thick substrates with epsiv=80. GaAs MESFET consists of 8 partial transistors with gate dimensions of 1680 mumtimes.25 mum. Theoretical performance specifications of the scheme are as follows: output power>16 W, gain factor>6.5 dB, input VSWR 1.1-1.6, output VSWR 1.8-2.0

Keywords

III-V semiconductors; gallium arsenide; microwave field effect transistors; network topology; power MESFET; travelling wave tubes; 0.3 mm; 0.5 mm; 2 cm; GaAs; GaAs MESFET; alumina substrate; circuit topology; combining power microwave FET; matching capacitor; metal semiconductor field effect transistor; three-way travelling-wave combiner; three-way travelling-wave divider; transmission lines; Capacitors; Circuit topology; Distributed parameter circuits; Gain; Gallium arsenide; MESFETs; Microwave FETs; Microwave transistors; Power transmission lines; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference

Print_ISBN

966-7968-92-8

Electronic_ISBN

966-7968-92-8

Type

conf

DOI

10.1109/CRMICO.2006.256343

Filename

4023648